2SD2449 2003-02-04 1 toshiba transistor silicon npn triple diffused type (darlington power transistor) 2SD2449 power amplifier applications high breakdown voltage: v ceo = 160 v (min) complementary to 2sb1594 maximum ratings (ta = 25c) characteristics symbol rating unit collector-base voltage v cbo 160 v collector-emitter voltage v ceo 160 v emitter-base voltage v ebo 5 v collector current i c 10 a base current i b 1 a collector power dissipation (tc = 25c) p c 150 w junction temperature t j 150 c storage temperature range t stg ? 55 to 150 c equivalent circuit unit: mm jedec D jeita D toshiba 2-21f1a weight: 9.75 g (typ.) base emitter 10 ? collector
2SD2449 2003-02-04 2 electrical characteristics (ta = 25c) characteristics symbol test condition min typ. max unit collector cut-off current i cbo v cb = 160 v, i e = 0 D D 5 a emitter cut-off current i ebo v eb = 5 v, i c = 0 D D 5 a collector-emitter breakdown voltage v (br) ceo i c = 50 ma, i b = 0 160 D D v h fe (1) (note) v ce = 5 v, i c = 8 a 3000 D 20000 dc current gain h fe (2) v ce = 5 v, i c = 12 a 2000 D D collector-emitter saturation voltage v ce (sat) i c = 8 a, i b = 8 ma D D 3.0 v base-emitter voltage v be v ce = 5 v, i c = 8 a D D 3.0 v transition frequency f t v ce = 5 v, i c = 1 a D 30 D mhz collector output capacitance c ob v cb = 10 v, i e = 0, f = 1 mhz D 150 D pf note: h fe (1) classification a: 3000 to 10000, b: 5000 to 15000, c: 7000 to 20000 marking explanation of lot no. product no. lot no. 2SD2449 h fe classification (a/b/c) toshiba japan month of manufacture (january to december are denoted by letters a to l respectively.) year of manufacture (last decimal digit of the year of manufacture)
2SD2449 2003-02-04 3 ambient temperature ta (c) p c ? ta collector power dissipation p c (w) collector-emitter voltage v ce (v) safe operating area collector current i c (a) h fe ? i c dc current gain h fe collector current i c (a) collector-emitter voltage v ce (v) i c ? v ce collector current i c (a) base-emitter voltage v be (v) i c ? v be collector current i c (a) collector current i c (a) v ce (sat) ? i c collector-emitter saturation voltage v ce (sat) (v) 0 0 40 tc = ta infinite heat sink 80 40 80 120 160 200 120 160 0 0 4 8 2 4 6 8 i b = 100 a 400 300 200 common emitter tc = 25c 10 2 6 10 150 250 350 500 450 300 0.03 common emitter v ce = 5 v 500 1000 3000 5000 10000 30000 0.3 1 30 tc = 100c 25 ? 25 0.1 3 50 50 10 100 0.3 10 tc = 100c ? 25 25 common emitter i c /i b = 250 1 0.03 0.05 0.3 0.5 1 5 0.1 3 10 0.5 3 0.1 5 0 0 4 8 1 2 3 4 common emitter v ce = 5 v 5 2 6 10 tc = 100c 25 ? 25 10 30 50 100 0.05 2 10 0.1 0.3 1 3 5 *: single nonrepetitive pulse tc = 25c curves must be derated linearly with increase in temperature. i c max (continuous) i c max (pulsed)* 10 ms* 100 ms* dc operation tc = 25c 300 v ceo max 3 0.5 30 1 ms* 500
2SD2449 2003-02-04 4 toshiba is continually working to improve the quality and reliability of its products. nevertheless, semiconductor devices in general can malfunction or fail due to their inherent electrical sensitivity and vulnerability to physical stress. it is the responsibility of the buyer, when utilizing toshiba products, to comply with the standards of safety in making a safe design for the entire system, and to avoid situations in which a malfunction or failure of such toshiba products could cause loss of human life, bodily injury or damage to property. in developing your designs, please ensure that toshiba products are used within specified operating ranges as set forth in the most recent toshiba products specifications. also, please keep in mind the precautions and conditions set forth in the ?handling guide for semiconductor devices,? or ?toshiba semiconductor reliability handbook? etc.. the toshiba products listed in this document are intended for usage in general electronics applications (computer, personal equipment, office equipment, measuring equipment, industrial robotics, domestic appliances, etc.). these toshiba products are neither intended nor warranted for usage in equipment that requires extraordinarily high quality and/or reliability or a malfunction or failure of which may cause loss of human life or bodily injury (?unintended usage?). unintended usage include atomic energy control instruments, airplane or spaceship instruments, transportation instruments, traffic signal instruments, combustion control instruments, medical instruments, all types of safety devices, etc.. unintended usage of toshiba products listed in this document shall be made at the customer?s own risk. the information contained herein is presented only as a guide for the applications of our products. no responsibility is assumed by toshiba corporation for any infringements of intellectual property or other rights of the third parties which may result from its use. no license is granted by implication or otherwise under any intellectual property or other rights of toshiba corporation or others. the information contained herein is subject to change without notice. 000707ea a restrictions on product use
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